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CONTENTS
Volume 5, Number 1, March 2017
 

Abstract
In this paper, the critical buckling temperature of single-walled Boron Nitride nanotube (SWBNNT) is estimated using a new nonlocal first-order shear deformation beam theory. The present model is capable of capturing both small scale effect and transverse shear deformation effects of SWBNNT and is based on assumption that the inplane and transverse displacements consist of bending and shear components, in which the bending components do not contribute toward shear forces and, likewise, the shear components do not contribute toward bending moments. Results indicate the importance of the small scale effects in the thermal buckling analysis of Boron Nitride nanotube.

Key Words
single walled boron nitride nanotube; critical buckling temperature; small scale effect

Address
(1) Abderrahmane Hadj Elmerabet, Abdelouahed Tounsi, Abdelwahed Semmah:
Laboratoire de Modélisation et Simulation Multi-échelle, Département de Physique, Faculté des Sciences Exactes, Département de Physique, Université de Sidi Bel Abbés, Algeria;
(2) Houari Heireche, Abdelouahed Tounsi:
Algerian National Thematic Agency of Research in Science and Technology (ATRST), Algeria;
(3) Abdelouahed Tounsi:
Material and Hydrology Laboratory, University of Sidi Bel Abbes, Faculty of Technology, Civil Engineering Department, Algeria.

Abstract
We examine the total optical dielectric function (TODF) of impurity doped GaAs quantum dot (QD) from the viewpoint of anisotropy, position-dependent effective mass (PDEM) and position dependent dielectric screening function (PDDSF), both in presence and absence of noise. The dopant impurity potential is Gaussian in nature and noise employed is Gaussian white noise that has been applied to the doped system via two different modes; additive and multiplicative. A change from fixed effective mass and fixed dielectric constant to those which depend on the dopant coordinate manifestly affects TODF. Presence of noise and also its mode of application bring about more rich subtlety in the observed TODF profiles. The findings indicate promising scope of harnessing the TODF of doped QD systems through expedient control of site of dopant incorporation and application of noise in desired mode.

Key Words
quantum dot; impurity; optical dielectric function; anisotropy; position-dependent effective mass; position-dependent dielectric screening function; Gaussian white noise

Address
Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal, India.

Abstract
One of the methods of removing cyanide from wastewater is surface adsorption. We simulated the removal of cyanide from a synthetic wastewater in the presence of Titanium dioxide nano-particles absorbent uses VISUAL MINTEQ 3.1 software. Our aim was to determine the factors affecting the adsorption of cyanide from synthetic wastewater applying simulation. Synthetic wastewater with a concentration of 100 mg/l of potassium cyanide was used for simulation. The amount of titanium dioxide was 1 g/l under the temperature of 25

Key Words
cyanide; titanium dioxide nanoparticles adsorption; simulation

Address
(1) Banafshe Safavi, Gholamreza Asadollahfardi:
Department of Civil Engineering at Kharazmi University, Mofateh St., Tehran, Iran;
(2) Ahmad khodadadi Darban:
Department of Mining Engineering at Tarbiat Modarres University, Jalal al Ahmad St., Tehran, Iran.

Abstract
This paper deals with free vibration analysis of nanosize rings and arches with consideration of surface effects. The Gurtin-Murdach model is employed for incorporating the surface effect parameters including surface density, while the small scale effect is taken into consideration based on nonlocal elasticity theory of Eringen. An analytical Navier solution is presented to solve the governing equations of motions. Comparison between results of the present work and those available in the literature shows the accuracy of this method. It is explicitly shown that the vibration characteristics of the curved nanosize beams are significantly influenced by the surface density effects. Moreover, it is shown that by increasing the nonlocal parameter, the influence of surface density reduce to zero, and the natural frequency reaches its classical value. Numerical results are presented to serve as benchmarks for future analyses of nanosize rings and arches.

Key Words
radial vibration analysis; nanosize rings and arches; curved nanobeams; surface effects

Address
Mechanical Engineering Department, Faculty of Engineering, Imam Khomeini International University, Qazvin, P.O.B. 16818-34149, Iran.

Abstract
Till now nanotechnology based anti-parasite pharmaceutical dosage forms development and application is being vastly developed worldwide. The field of nanotechnology involves an array of different areas of expertise with the application of innovative products in Medicine, Engineering, and to a less extent to Veterinary Medicine. In our conclusion, enriched experimental analysis is required, to announce the state of the art outputs to remove negative problems. Animals or human may benefit from nanotechnological products respectively, like vaccines, target recombinant peptides, or novel pharmaceutical alternatives. As a result, it would be desirable to give some energy for thought to drive nanomedical scientific introductions. To create more safe medium to animals and or humans. In this review all aspects of nanoparticles applications in parasitology will be carefully discussed depending on particle charge and size as well as kind of nanoparticles. Perspectives and prospective of nanoparticles in human parasitology will be predicted as well.

Key Words
human parasitology; nanoparticles; anti-parasite application

Address
Department of Laboratory Animal Science, Pasteur Institute of Iran, Tehran, Iran.

Abstract
A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFETbehaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.

Key Words
nanoelectronic devices; carbon nanotube field effect transistors; modeling; device simulation; I-V characteristics; temperature effects; computer aided design

Address
(1) Roberto Marani:
Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l\'Automazione, Bari, Italy;
(2) Anna G. Perri:
Dipartimento di Ingegneria Elettrica e dell\'Informazione, Laboratorio di Dispositivi Elettronici, Politecnico di Bari, Italy.


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